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1.
A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly
2.
Pure 
at 
has equal number of electron 
and hole 
concentrations of 
. Doping by indium increases 
to 
. The doped semiconductor is of
at has equal number of electron and hole concentrations of . Doping by indium increases to . The doped semiconductor is of
3.
The potential in depletion layer is due to
4.
The circuit shown in the figure contains two diodes each with a forward resistance of 
and with infinite backward resistance. If the battery is 3V, the current through the 
resistance (in ampere) is
and with infinite backward resistance. If the battery is 3V, the current through the resistance (in ampere) is
5.
The truth table given below is for (
and 
are the inputs, 
is the output)
and are the inputs, is the output)
| A | B | Y |
| 0 | 0 | 1 |
| 0 | 1 | 1 |
| 1 | 0 | 1 |
| 1 | 1 | 0 |
6.
The transistors provide good power amplification when they are used in
7.
The voltage gain of the following amplifier is
8.
The current gain 
of a transistor is 0.9. The transistor is connected to common base configuration. What would be the change in collector current when base current changes by 4 mA?
of a transistor is 0.9. The transistor is connected to common base configuration. What would be the change in collector current when base current changes by 4 mA?
9.
In Boolean algebra, 
is equal to
is equal to
10.
In n-p-n transistor, in CE configuration
(1) The emitter is heavily doped than the collector.
(2) Emitter and collector can be interchanged.
(3) The base region is very thin but is heavily doped.
(4) The conventional current flows from base to emitter.
(1) The emitter is heavily doped than the collector.
(2) Emitter and collector can be interchanged.
(3) The base region is very thin but is heavily doped.
(4) The conventional current flows from base to emitter.