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1.
Consider the following statement 
and 
and identify the correct choice of the given answers
(A) A zener diode is always connected in reverse bias
(B) The potential barrier of a PN junction lies between 0.1 to 0.3 V approximately
and and identify the correct choice of the given answers(A) A zener diode is always connected in reverse bias
(B) The potential barrier of a PN junction lies between 0.1 to 0.3 V approximately
2.
In presence of interspace charge, at plate voltage of 200 V, the current is 80 mA. Then the current in mA at 400 V will be
3.
The cause of the potential barrier in a 
-
diode is
- diode is
4.
In an unbiased 
-
junction
- junction
5.
Within depletion region of p-n junction diode
6.
The introduction of a grid in a triode valve affects plate current by
7.
Consider the following statements and and identify the correct choice of the given answers
A. The width of the depletion layer in a P-N junction diode increases in forward bias
B. In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap
and and identify the correct choice of the given answersA. The width of the depletion layer in a P-N junction diode increases in forward bias
B. In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap
8.
The typical ionisation energy of a donor in silicon is
9.
The frequency response curve of 
coupled amplifier is shown in figure. The band width of the amplifier will be
coupled amplifier is shown in figure. The band width of the amplifier will be
10.
The coordination number of hexagonal close packing (hcp) is