1.
The dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junction are
2.
If a small amount of antimony is added to germanium crystal
3.
In an n-type silicon, which of the following statements is true.
4.
At absolute zero, Si acts as a
5.
In good conducrors of electricity the type of bonding that exist is
6.
The manifestation of band structure in solids is due to
7.
The probability of electrons to be found in the conduction band of an intrinsic semiconductor of finite temperature
8.
9.
When an electric field is applied across a semicoriductor
10.