Engineering Services Exam- Electrical Engineering Set 1

In a tunnel diode, the width of the junction barrier is

When maximum reverse-biasing voltage is applied between the collector and base terminals of the transistor and emitter is open circuited, breakdown occurs due to

In a Field Effect Transistor (FET), the maximum voltage that can be applied between any two terminals is given by

A depletion-type MOSFET can be operated in an enhancement mode where negative charges are induced into n-type channel by applying

The double base diode which is operated with the emitter forward biased and a smaller emitter junction is called

Which one of the following is not a distortion type that exists either separately or simultaneously in amplifiers?

Transistor noise caused by the recombination and generation of carriers on the surface of the crystal is called

During a low frequency response of an amplifier which is invariably of RC-coupled type, there is a range of frequency characteristics over which the amplification is constant and delay is also constant, called

In a crystal oscillator, especially when piezoelectric crystal like quartz is applied, then the inductor L, capacitor C and resistor R are the analogs of the mechanical system as

In a phase shift oscillator using an FET, at a certain frequency if the phase shift introduced by the RC network is 180