What should be the value of transconductance, if N-channel E-MOSFET is biased in saturation region with the conduction parameter (k) = 0.836 mA/ V2 and drain current (ID) = 1.5 mA?
Which type of breakdown effect gets enhanced due to parasitic BJT action along with increase in drain current solely by the reduction in size of MOSFET?
After passing through which circuit/network ,does the signal Xd (output signal obtained by taking the difference of two input signals) get multiplied by '-1'?