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1.
The value of transconductance decreases in simplified low frequency equivalent circuit of n-channel MOSFET due to increase in the value of _______
2.
What is the effect of MOSFET biasing in the saturation region especially while representing the internal resistances and capacitances in n-channel E-MOSFET configuration?
3.
Which among the following are specifically the advantages of bipolar design technology?
A. High input resistance at low frequencies
B. Zero input bias current
C. High voltage gain
D. High value of transconductance
A. High input resistance at low frequencies
B. Zero input bias current
C. High voltage gain
D. High value of transconductance
4.
Which condition is applicable for a body to be more positive than source in a small signal equivalent circuit of N-type MOSFET inclusive of body effect?
5.
Which among the below mentioned devices acts as a driver in CMOS Inverter Circuit?
6.
Biasing of D-MOSFET in saturation or non-saturation region while using with depletion load device, specifically depends on ______
7.
Which resistance plays a significant role in stabilization of Q-point for self-biasing circuit of BJT?
8.
What is the significance of adopting an interdigitated structure of power transistors?
9.
Which among the below mentioned reasons is/are responsible for the occurrence of second breakdown phenomenon in power BJT?
10.
Which types of power transistors have the capability to withstand the higher junction temperatures?